GaN C- to X-band Hybrid Pallet Amplifiers
MEC has successfully designed GaN-based Hybrid Pallet Amplifiers for different customers.
Their characteristics are:
- GaN Power Bars (can be chosen from different vendors) + high frequency ceramic substrates in thin film process for matching and power dividing/combining
- Pre-matching or Full-matching (to the system reference impedance)
- DC to RF decoupling
- Compact dimension
- Easy integration in SSPA schemes
- Low Cost
- Fast Time to Production
Typical achievable performance depends on desired:
- Centre Frequency
- Output Power and Drain Efficiency
- Dimension
- Chosen GaN Power Bar Technology
| C-Band | Min | Max | Unit | |
|---|---|---|---|---|
| Centre Frequency | 4 | 7 | GHz | |
| Relative Bandwidth | 8 | 12 | % | |
| Output Power (*) | 60/80 | 110/130 | 200/220 | W |
| Number of Power Bars | 1 | 2 | 4 | |
| Drain Efficiency (*) | 55 | 50 | 45 | % |
| Dimension (*) | 150 | 600 | 1600 | mm2 |
| (*) at midband - Pout and DE considered in pulsed condition |
| X-Band | Min | Max | Unit | |
|---|---|---|---|---|
| Centre Frequency | 8 | 10 | GHz | |
| Relative Bandwidth | 8 | 12 | % | |
| Output Power (*) | 50/80 | 90/120 | 170/200 | W |
| Number of Power Bars | 1 | 2 | 4 | |
| Drain Efficiency (*) | 50 | 45 | 40 | % |
| Dimension (*) | 100 | 400 | 1100 | mm2 |
| (*) at midband - Pout and DE considered in pulsed condition |
Contact us if you need more details.