MEC has successfully designed microwave subsystem modules for a number of customers. We work with our customers’ system engineers to define specifications and functionality, and design modules to optimize performance of the overall subsystem.
Our design experience extends into many applications. We have designed and prototyped an L-band GaAs high power amplification lineup for SAR systems which has recently translated into production for our customer. Other prototypes have been designed at L-, S-, C- bands using both GaAs and GaN technologies. Our developed IP in high power amplification modules allows us to rapidly develop highly customized solutions for our customers.
[heading title=”Module Design Services” type=”h1″ style=”style2″ text_transform=”default” align=”left” margin_bottom=”20″] [checklist style=”style1″ icon=”icon-checkmark” ] [item] GaAs and GaN expertise [/item] [item] Foundry selection [/item] [item] Customization of active devices when needed (ex. Powerbar configuration and prematching) [/item] [item] Design of matching and interconnecting circuits in very different technologies (such as High Frequency Laminates, Thin Film processing on Alumina and High DK materials, LTCC) [/item] [item] Module Packaging Design [/item] [item] Power Conditioning Circuits Design (High power pulsing and Optimal biasing) [/item] [item] Module Engineering for Production [/item] [/checklist]
[checklist style=”style1″ icon=”icon-checkmark” ] [item] GaN Pallet Amplifiers [/item] [item] GaN QMMIC Amplifiers [/item] [/checklist]
Passionate – Dedicated – Professional
Customer-Centric marketing
Euisque cursus metus vitae sedpharetra auctor semy mas interdum magla
fusce nec litora diam vestibulum andyus eget ipsum faucibus
[heading title=”GaN C- to X-band Hybrid Pallet Amplifiers” type=”h1″ style=”style2″ text_transform=”default” align=”left” margin_bottom=”20″]
MEC has successfully designed GaN-based Hybrid Pallet Amplifiers for different customers.
Their characteristics are:
[checklist style=”style1″ icon=”icon-checkmark” ] [item] GaN Power Bars (can be chosen from different vendors) + high frequency ceramic substrates in thin film process for matching and power dividing/combining [/item] [item] Pre-matching or Full-matching (to the system reference impedance)[/item] [item] DC to RF decoupling [/item] [item] Compact dimension [/item] [item] Easy integration in SSPA schemes [/item] [item] Low Cost [/item] [item] Fast Time to Production [/item] [/checklist]Typical achievable performance depends on desired:
[checklist style=”style1″ icon=”icon-checkmark” ] [item] Centre Frequency [/item] [item] Output Power and Drain Efficiency [/item] [item] Dimension [/item] [item] Chosen GaN Power Bar Technology [/item] [/checklist]| C-Band | Min | Max | Unit | |
|---|---|---|---|---|
| Centre Frequency | 4 | 7 | GHz | |
| Relative Bandwidth | 8 | 12 | % | |
| Output Power (*) | 60/80 | 110/130 | 200/220 | W |
| Number of Power Bars | 1 | 2 | 4 | |
| Drain Efficiency (*) | 55 | 50 | 45 | % |
| Dimension (*) | 150 | 600 | 1600 | mm2 |
| (*) at midband - Pout and DE considered in pulsed condition |
| X-Band | Min | Max | Unit | |
|---|---|---|---|---|
| Centre Frequency | 8 | 10 | GHz | |
| Relative Bandwidth | 8 | 12 | % | |
| Output Power (*) | 50/80 | 90/120 | 170/200 | W |
| Number of Power Bars | 1 | 2 | 4 | |
| Drain Efficiency (*) | 50 | 45 | 40 | % |
| Dimension (*) | 100 | 400 | 1100 | mm2 |
| (*) at midband - Pout and DE considered in pulsed condition |
Contact us if you need more details.
[heading title=”GaN C- to X-band Hybrid Pallet Amplifiers” type=”h1″ style=”style2″ text_transform=”default” align=”left” margin_bottom=”20″]
MEC has successfully designed GaN-based Hybrid Pallet Amplifiers for different customers.
Their characteristics are:
[checklist style=”style1″ icon=”icon-checkmark” ] [item] GaN Power Bars (can be chosen from different vendors) + high frequency ceramic substrates in thin film process for matching and power dividing/combining [/item] [item] Pre-matching or Full-matching (to the system reference impedance)[/item] [item] DC to RF decoupling [/item] [item] Compact dimension [/item] [item] Easy integration in SSPA schemes [/item] [item] Low Cost [/item] [item] Fast Time to Production [/item] [/checklist]Typical achievable performance depends on desired:
[checklist style=”style1″ icon=”icon-checkmark” ] [item] Centre Frequency [/item] [item] Output Power and Drain Efficiency [/item] [item] Dimension [/item] [item] Chosen GaN Power Bar Technology [/item] [/checklist]| C-Band | Min | Max | Unit | |
|---|---|---|---|---|
| Centre Frequency | 4 | 7 | GHz | |
| Relative Bandwidth | 8 | 12 | % | |
| Output Power (*) | 60/80 | 110/130 | 200/220 | W |
| Number of Power Bars | 1 | 2 | 4 | |
| Drain Efficiency (*) | 55 | 50 | 45 | % |
| Dimension (*) | 150 | 600 | 1600 | mm2 |
| (*) at midband - Pout and DE considered in pulsed condition |
| X-Band | Min | Max | Unit | |
|---|---|---|---|---|
| Centre Frequency | 8 | 10 | GHz | |
| Relative Bandwidth | 8 | 12 | % | |
| Output Power (*) | 50/80 | 90/120 | 170/200 | W |
| Number of Power Bars | 1 | 2 | 4 | |
| Drain Efficiency (*) | 50 | 45 | 40 | % |
| Dimension (*) | 100 | 400 | 1100 | mm2 |
| (*) at midband - Pout and DE considered in pulsed condition |
Contact us if you need more details.
